1999. 12. 16 1/3 semiconductor technical data MJE13005F triple diffused npn transistor revision no : 3 switching regulator application. high voltage switching application. high speed dc-dc converter application. fluorescent light ballastor application. features excellent switching times : t on =0.8 s(max.), t f =0.9 s(max.), at i c =2a high collector voltage : v cbo =700v. maximum rating (ta=25 1 ) dim millimeters 1. base 2. collector 3. emitter to-220is 10.30 max 15.30 max 2.70 y 0.30 0.85 max x 3.20 y 0.20 3.00 y 0.30 a b c d e f g 12.30 max 0.75 max h 13.60 y 0.50 3.90 max 1.20 1.30 2.54 4.50 y 0.20 6.80 2.60 y 0.20 10 ? j k l m n o p q r f o q 1 2 3 l p n b g j m d n t t h e r t v s k l u t s 0.5 5 ^ 25 ^ 2.60 y 0.15 v u d a c electrical characteristics (ta=25 1 ) characteristic symbol test condition min. typ. max. unit emitter cut-off current i ebo v eb =9v, i c =0 - - 1 ma dc current gain h fe (1) v ce =5v, i c =1a 19 - 36 h fe (2) v ce =5v, i c =2a 10 - 30 collector-emitter saturation voltage v ce(sat) i c =1a, i b =0.2a - - 0.5 v i c =2a, i b =0.5a - - 0.6 i c =4a, i b =1a - - 1 base-emitter saturation voltage v be(sat) i c =1a, i b =0.2a - - 1.2 v i c =2a, i b =0.5a - - 1.6 collector output capacitance c ob v cb =10v, f=0.1mhz, i e =0 - 65 - pf transition frequency f t v ce =10v, i c =0.5a 4 - - mhz turn-on time t on i b1 62.5? b1 i cc v =125v i b2 i b2 300 s i =i =0.4a 2% b1 b2 output duty cycle input < = - - 0.8 s storage time t stg - - 4 s fall time t f - - 0.9 s characteristic symbol rating unit collector-base voltage v cbo 700 v collector-emitter voltage v ceo 400 v emitter-base voltage v ebo 9 v collector current dc i c 4 a pulse i cp 8 base current i b 2 a collector power dissipation (tc=25 1 ) p c 30 w junction temperature t j 150 1 storage temperature range t stg -55 150 1
1999. 12. 16 2/3 MJE13005F revision no : 3 0.01 collector current i (a) switching characteristic turn-on time ( s) c 0.04 0. 1 0.3 1 4 collector current i (a) c cb collector-base voltage v (v) collector output capacitance collector-emitter saturation ce(sat) collector current i (a) c collector current i (a) dc current gain h fe c common emitter voltage v (v) common emitter base-emitter voltage v (v) be(sat) 0.03 0.05 0.1 0.3 0.5 1 v =125v i /i =5 cc c b t @v =5v d be(off) r t switching characteristic 0.5 switching time ( s) 0.3 0.1 0.04 3 5 1 10 c collector current i (a) 0. 1 0.3 14 cc v =125v i /i =5 c b f t stg t c (pf) ob common emitter v - i be(sat) c - v 0.05 0.3 1 0.1 0.04 c ce(sat) v - i 0.04 5 0.1 1 0.4 100 h - i fe c 4 10 30 50 v =5v ce t =150 c j t =25 c j t =-55 c j 4 0.15 0.25 0.35 0.45 0.55 i /i =4 c b 25 c c 0.1 0.04 1.1 0.9 0.7 0.5 0.3 1 0.3 1.3 4 t =-55 c j t =25 c j t =25 c j t =150 c j v @i /i =4 be(sat) c b v @i /i =4 be(on) c b 0.1 1 0.3 3 1 10 30 100 300 1 k 3 5 10 30 50 100 300 500 1k ob cb f=1mhz ta=25 c
2000. 3. 7 3/3 MJE13005F revision no : 6 0 collector power dissipation p (w) c 0 ambient temperature ta ( c) c p - ta collector current i (a) c safe operating area 500 s 5ms dc 1ms 25 50 75 100 125 150 175 200 5 10 15 20 25 30 35 40 45 50 tc=ta infinite heat sink 0.01 collector-emitter voltage v (v) 3 5 10 30 ce 50 100 300 1k 0.03 0.05 0.1 0.3 0.5 1 3 5 10 20 single nonrepetitive pulse tc=25 c curve must be derated linearly with increase in temperature i max.(pulsed) c * * * * *
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